3 edition of Narrow bandgap semiconducting silicides found in the catalog.
Narrow bandgap semiconducting silicides
John E. Mahan
by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va
Written in English
|Statement||principal investigator, John E. Mahan.|
|Series||NASA contractor report -- NASA CR-190882.|
|Contributions||United States. National Aeronautics and Space Administration.|
|The Physical Object|
Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides Article in Semiconductors 43(2) February with Reads How we measure 'reads'. Only when excitation is made with an energy above the several eV bandgap will conduction be possible. Semiconductors have a more narrow bandgap and even at room temperature a few conduction electrons will be excited into the conductance band. Doped Semiconductors have higher electrical conductance because added dopants provide conduction electrons.
Regarding the semiconducting silicide material, Mg 2 Si is chosen in this respect. This is because it has the lowest energy band gap among other semiconducting silicide materials (like β -FeSi 2, and BaSi 2) and because these other silicide materials have large conduction band and valence band discontinuities with by: 3. This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal-semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar.
NARROW BANDGAP SEMICONDUCTING SILICIDES: INTRoINSIC INFRARED DETECTORS ON A SILICON CHIP Final SBIR-- relelse dllte _[J./V Principal Investigator: Dr. John E. Mahan () Colorado Research Development Corporation Seventeenth St. Suite Denver, CO () 30 May, Project Summ_ry. Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III–V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the Cited by:
Diet in ancient Israel
Effect of moderate exercise induced stress on the Th1 (Interferon-gamma) and Th2 (Interleukin-4) cytokine subset response
UPA in Western Europe 1948.
Sisimpurs reach and educational impact
A partnership of nations
Animal life-cycle feeding and nutrition
kiss in the dark
Workable program for community improvement, 1974-1976, City of Atlanta.
Jewish presence in the London theatre, 1660-1800.
Corgi party book.
Augustus L. Kidder.
Long-term needs of the elderly
The Family today and tomorrow
Narrow-gap semiconducting silicides: the band structure. Abstract. Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation.
ReSi was found to have an indirect gap value of by: 5. Narrow-gap semiconducting silicides: The band structure. Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation.
Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip: Authors: Mahan, John E. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2.
ReSi2 thin films were grown on () silicon wafers by vacuum evaporation of rhenium onto hot substrates in. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of eV.
Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip.
By John E. Mahan. Abstract. Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates.
Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is Author: John E. Mahan. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip.
By John E. Mahan. Abstract. Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on () silicon wafers Author: John E. Mahan. Narrow Band Gap Observed in a Molecular Ferroelastic: Ferrocenium Tetrachloroferrate Han-Yue Zhang, Chun-Li Hu, Zhao-Bo Hu, Jiang-Gao Mao, You Song &.
Summary. The main band structure features of various narrow bandgap semiconductor families are reviewed. A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in Cd x Hg 1-x Te by: 4.
The main band structure features of various narrow bandgap semiconductor families are reviewed. A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition Cited by: 4.
With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET Cited by: Narrow-Gap Semiconductors.
Springer Tracts in Modern Phys ISBN (print) ISBN (online) Nimtz, G. (), Recombination in Narrow-Gap Semiconductors, Physics Reports, 63, Abstract. A new quinoidal acceptor building block (namely IQTT) is designed with directed diradical character to control and narrow the bandgap while good chemical stability is maintained with the assistance of quantum mechanics simulations.
Then IQTT Cited by: 3. Get this from a library. Narrow bandgap semiconducting silicides: intrinsic infrared detectors on a silicon chip: final report.
[John E Mahan; United States. National Aeronautics and Space Administration.]. Narrow bandgap semiconducting silicides: intrinsic infrared detectors on a silicon chip, final report.
The resulting volume should serve as a major reference source for education and research in semiconducting materials. Thoroughly updated with emphasis on a new understanding of these processes developed over the past decade, this new edition promises to be among the most valuable books in the libraries of electronic engineers, material scientists, electrophysicists, and students for.
Book Description. Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).
Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a relatively large band gap compared to conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 1 - electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range of 2 - 4 eV.
LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. determined by computer analysis of the optical data.
the optical absorption coefficient was determined as a function of photon energy. slightly less than eV, and yet it is a very strong absorber of light above the absorption edge. A narrow-bandgap semiconducting thin film of poly-peri-naphthalene (PPN) has been synthesised via the pyrolysis of 3,4,9,perylenetetracarboxylic dianhydride (PTCDA).
By tuning the pyrolysis temperature, the bandgap of the PPN film can be adjusted from to Cited by: 6. Si:H(i)/(silicides NPs/a-Si) x /a-Si:H(i)/a-Si:H(n +)/ITO/glass wit.
h multiple layers (x = 8,15) of the embedded narrow band gap semiconducting nanoparticle silicide (CrSi. 2, Mg. Si and Ca. Si) multistructures have been. grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the RDE and studied by.
in situ. Semiconducting Silicide Green Technologies. View all abstracts. β-FeSi 2 nanodots with a wider nanodot size distribution of ~5– nm and Si films containing α-FeSi 2 nanodots with a narrow size distribution of ~5–20 nm. The thermal conductivity of these films is lower than those of Si–silicide nanocomposite bulks.
Among them Mg.Currently, metallic silicides provide ohmic contacts, interconnects, and gates to CMOS microelectronic transistors, the semiconducting silicides have been extensively investigated for silicon-based photoelectronics such as LEDs and IR detectors, and the narrow bandgap semiconducting silicides have been used for robust, stable, and inexpensive thermoelectric materials.Nevertheless, thermoelectric silicides possess high melting point and different types of conduction, and due to their heat of formation (∆ f H), they show a good thermal stability and a maximum thermoelectric figure of merit (ZTmax) .
Moreover, and according to the A.F. Ioffé theory , most of the materials are narrow bandgap Cited by: 5.